skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Creators/Authors contains: "Akolkar, Rohan"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Electrochemical atomic layer etching (e-ALE) is a unique approach for etching metals one atomic layer at a time. If practiced under optimal conditions, e-ALE ensures minimal evolution of surface roughness due to the atomic layer-by-layer etching characteristics. During e-ALE of copper (Cu), the crucial first step is the formation of a cuprous sulfide (Cu2S) monolayer via the surface-limited sulfidization reaction. In this paper, we investigate the surface coverage of this sulfide layer as a function of the sulfidization potential, and show that the equilibrium coverage attained can be modeled using the Frumkin adsorption isotherm. At a potential of –0.74 V vs SHE, sulfidization provides near-complete monolayer coverage of Cu by Cu2S, which then facilitates e-ALE in a layer-by-layer etching mode thereby maintaining a smooth post-etch surface. Operation at potentials negative with respect to –0.74 V provides sub-monolayer coverage, which manifests in roughness amplification during etching. This work provides a thermodynamics-guided foundation for the selection of operating conditions during Cu e-ALE. 
    more » « less
  2. A novel process for the electrochemical atomic layer etching (e-ALE) of ruthenium (Ru) is described. In this process, the surface Ru is electrochemically oxidized to form a monolayer of ruthenium (III) hydroxide—Ru(OH)3. The Ru(OH)3monolayer is then selectively etched in an electrolyte containing chloride (Cl) species. This etching process is selective towards Ru(OH)3and does not attack the underlying Ru metal. Adsorbed Clon the Ru electrode is then cathodically desorbed before the sequence of Ru oxidation and Ru(OH)3etching is repeated. This e-ALE sequence is shown to etch Ru at approximately 0.5 monolayer per cycle while practically avoiding any surface roughness amplification. The proposed Ru e-ALE process uses a single electrolyte which eliminates the need for electrode transfer or electrolyte switching between process steps. In this report, we employ electrochemical, microscopic and spectroscopic techniques to gain insights into the various characteristics of the Ru e-ALE process. 
    more » « less